Article

A joint research team from Chungnam National University and GIST has developed a novel ultra-thin non-volatile memory device using 2D transition metal chalcogenides (TMD). This advancement utilizes spontaneous electric polarization within Janus-structured materials, achieving superior memory performance compared to traditional materials. The findings, published in Nano-Micro Letters, indicate enhanced data retention and durability, paving the way for applications in neuromorphic devices that simulate brain synapse functions.