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Ghent University Develops Epitaxially Grown Nano-Ridge Surface-Emitting Lasers on Silicon Wafers

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Researchers at Ghent University - imec have developed nano-ridge surface-emitting lasers (NRSELs) epitaxially grown on 300 mm silicon wafers. This innovation leverages one-dimensional photonic crystal modes, enabling scalable, tunable surface emission.

The NRSEL design overcomes limitations of traditional VCSELs by integrating high-quality III-V materials directly on silicon, allowing for flexible emission wavelengths and reduced device complexity. This advancement is poised to enhance applications in telecommunications, LIDAR, and quantum technologies.

Ghent University Develops Epitaxially Grown Nano-Ridge Surface-Emitting Lasers on Silicon Wafers
Feb 25, 2026, 12:08 PM

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