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Magnachip Semiconductor has launched a new generation of 650 V and 1200 V insulated-gate bipolar transistors (IGBTs) designed for solar inverters and energy storage systems, targeting applications from residential to industrial levels up to 150 kW. The devices feature a 40% reduction in cell pitch, enabling higher current density and lower conduction losses. Upcoming packaging updates and plans for 150 A 650 V devices and a new 750 V class are also in development, reflecting the company's strategic shift towards power semiconductors amidst growing solar and energy storage markets.