Article

Researchers from Mitsubishi Electric and the University of Tsukuba have uncovered the mechanism by which hydrogen generates free electrons in silicon, enhancing electron concentration control in power semiconductors. This breakthrough could lead to improved efficiency in insulated gate bipolar transistors (IGBTs), with demonstrated power loss reductions of up to 20% through hydrogen ion implantation. The findings may also extend to diamond and other ultra-wide bandgap materials, supporting advancements in energy-efficient technologies and carbon neutrality initiatives.