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RIR Power Electronics Ltd has introduced silicon carbide (SiC) merged-PiN Schottky diodes, designed to enhance efficiency in power systems for electric vehicles, industrial applications, and energy infrastructure. These innovative diodes combine Schottky and PiN structures, offering benefits such as high surge current capability, low leakage at high temperatures, and improved reliability. Target applications include EVs, data centers, renewable energy systems, and aerospace, supported by RIR's extensive experience in high-power semiconductors.