Article

Wolfspeed has successfully produced a single-crystal 300 mm silicon carbide wafer, marking a significant milestone in substrate manufacturing that could enhance supply economics and efficiency for high-power applications in artificial intelligence and computing. However, the transition from 200 mm to 300 mm wafers presents challenges in crystal growth and processing, requiring consistent methods to address issues such as thermal gradients and surface damage. If industrialized successfully, this advancement could position silicon carbide as a competitive alternative to silicon and gallium nitride technologies.