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EPC2366 eGaN FET Wins EPDT 2025 Product of the Year Award

DATA AND AI INFRASTRUCTURE

Efficient Power Conversion (EPC) announced that its EPC2366 40 V eGaN power transistor has won the EPDT 2025 Product of the Year Award in the Power Transistor category. With a low RDS(on) of 0.8 mΩ and capable of handling up to 88 A of continuous drain current, the EPC2366 is designed for high-efficiency applications such as data centers and robotics, and is supported by the EPC90167 evaluation board for testing in high-frequency scenarios.

EPC2366 eGaN FET Wins EPDT 2025 Product of the Year Award
Jan 15, 2026, 6:00 AM

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